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Prospects for Infrared Electroluminescence From Porous Silicon

Published online by Cambridge University Press:  25 February 2011

F. Koch  and
A. Kux
F. Koch
Affiliation:
Physik-Department E16, Tech.Univ. München, 8046 Garching, Germany
A. Kux
Affiliation:
Physik-Department E16, Tech.Univ. München, 8046 Garching, Germany
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Abstract

Efficient visible luminescence from porous Si requires the 3-dimensional confinement of charges in structures with typical ∼3nm size. Such microporously etched Si acts as an intrinsic wide-gap material and is highly resistive. The material does not have the good transport properties consistent with an efficient electrical excitation. We instead suggest to employ mesoporously etched, p+-type Si with its better conductivity in electroluminescence application. The material luminesces in two spectral bands centered about 0.8eV and 1.0eV in the infrared. Both emissions originate from surface-bound states. We report on the temperature dependence of luminescence, on transport and first attempts to generate infrared light by the injection of electrical current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 391
Copyright
Copyright © Materials Research Society 1993

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