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Properties of the EL2 Level in Organometallic Ga1−xAlxAs

Published online by Cambridge University Press:  26 February 2011

A. Ben Cherifa ,
R. Azoulay  and
G. Guillot
A. Ben Cherifa
Affiliation:
Laboratoire de Physique de la Matière, INSA de Lyon, 20, Avenue A. Einstein, 69621 Villeurbanne Cèdex, France
R. Azoulay
Affiliation:
CNET Bagneux, 196 Avenue H. Ravera, 92220 Bagneux, France
G. Guillot
Affiliation:
Laboratoire de Physique de la Matière, INSA de Lyon, 20, Avenue A. Einstein, 69621 Villeurbanne Cèdex, France
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Abstract

We have studied by means of deep level transient spectroscopy and photocapacitance measurements deep electron traps in undoped Ga1−xAlxAs of n-type grown by metalorganic chemical vapor deposition with 0≤x≤ 0.3. A dominant deep electron trap is detected in the series of alloys. Its activation energy is found at EC-0.8 eV in GaAs and it increases with x. Its concentration is found nearly independent of x. For the first time we observed for this level in the Ga1−xAlxAs alloys, the photocapacitance quenching effect typical for the EL2 defect in GaAs thus confirming clearly that EL2 is also created in MOCVD Ga1−xAlxAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 401
Copyright
Copyright © Materials Research Society 1988

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References

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