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Properties of Pr-based high k dielectric films obtained by Metal-Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  28 July 2011

Raffaella Lo Nigro
Affiliation:
IMM, sezione di Catania, CNR Stradale Primosole n 50, I-95121 Catania, Italy
Roberta G. Toro
Affiliation:
Dipartimento di Scienze Chimiche, Università di Catania, and INSTM, UdR Catania. Viale Andrea Doria n 5, I-95125 Catania, Italy.
Graziella Malandrino
Affiliation:
Dipartimento di Scienze Chimiche, Università di Catania, and INSTM, UdR Catania. Viale Andrea Doria n 5, I-95125 Catania, Italy.
Vito Raineri
Affiliation:
IMM, sezione di Catania, CNR Stradale Primosole n 50, I-95121 Catania, Italy
Ignazio L. Fragalà
Affiliation:
Dipartimento di Scienze Chimiche, Università di Catania, and INSTM, UdR Catania. Viale Andrea Doria n 5, I-95125 Catania, Italy.
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Abstract

We report the results of a recent study on the deposition of praseodymium oxides thin films on silicon substrates by Metal-Organic Chemical Vapor Deposition (MOCVD). A suited Pr(III) β-diketonate precursor has been used as the metal source and the deposition conditions have been carefully selected because of a large variety of possible PrO2−x (x= 0−0.5) phases. Pr2O3 films have been obtained in a hot-wall MOCVD reactor under non oxidising ambient at 750°C deposition temperature. The structural and morphological characteristics of Pr2O3 films have been carried out by X-ray diffraction (XRD) and high resolution transmission electron microscopy (TEM). Chemical compositional studies have been performed by X- ray photoelectron spectroscopic (XPS) analysis and a fully understanding of the MOCVD process has been achieved. Preliminary electrical measurements point to MOCVD as a reliable growth technique to obtain good quality praseodymium oxide based films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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