Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-dxfhg Total loading time: 0.276 Render date: 2021-03-08T12:57:40.352Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

Z. Yu
Affiliation:
Physical Sciences Research Laboratories, Motorola Labs, 2100 E. Elliot Road, Tempe, AZ 85284
R. Droopad
Affiliation:
Physical Sciences Research Laboratories, Motorola Labs, 2100 E. Elliot Road, Tempe, AZ 85284
J. Ramdani
Affiliation:
Physical Sciences Research Laboratories, Motorola Labs, 2100 E. Elliot Road, Tempe, AZ 85284
J.A. Curless
Affiliation:
Physical Sciences Research Laboratories, Motorola Labs, 2100 E. Elliot Road, Tempe, AZ 85284
C.D. Overgaard
Affiliation:
Physical Sciences Research Laboratories, Motorola Labs, 2100 E. Elliot Road, Tempe, AZ 85284
J.M. Finder
Affiliation:
Physical Sciences Research Laboratories, Motorola Labs, 2100 E. Elliot Road, Tempe, AZ 85284
K.W. Eisenbeiser
Affiliation:
Physical Sciences Research Laboratories, Motorola Labs, 2100 E. Elliot Road, Tempe, AZ 85284
J. Wang
Affiliation:
Physical Sciences Research Laboratories, Motorola Labs, 2100 E. Elliot Road, Tempe, AZ 85284
J.A. Hallmark
Affiliation:
Physical Sciences Research Laboratories, Motorola Labs, 2100 E. Elliot Road, Tempe, AZ 85284
W.J. Ooms
Affiliation:
Physical Sciences Research Laboratories, Motorola Labs, 2100 E. Elliot Road, Tempe, AZ 85284
Get access

Abstract

Single crystalline perovskite oxides such as SrTiO3 (STO) are highly desirable for future generation ULSI applications. Over the past three decades, development of crystalline oxides on silicon has been a great technological challenge as an amorphous silicon oxide layer forms readily on the Si surface when exposed to oxygen preventing the intended oxide heteroepitaxy on Si substrate. Recently, we have successfully grown epitaxial STO thin films on Si(001) surface by using molecular beam epitaxy (MBE) method. Properties of the STO films on Si have been characterized using a variety of techniques including in-situ reflection high energy electron diffraction (RHEED), ex-situ X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). The STO films grown on Si(001) substrate show bright and streaky RHEED patterns indicating coherent two-dimensional epitaxial oxide film growth with its unit cell rotated 450 with respect to the underlying Si unit cell. RHEED and XRD data confirm the single crystalline nature and (001) orientation of the STO films. An X-ray pole figure indicates the in-plane orientation relationship as STO[100]//Si[110] and STO(001)// Si(001). The STO surface is atomically smooth with AFM rms roughness of 1.2 AÅ. The leakage current density is measured to be in the low 10−9 A/cm2 range at 1 V, after a brief post-growth anneal in O2. An interface state density Dit = 4.6 × 1011 eV−1 cm−2 is inferred from the high-frequency and quasi-static C-V characteristics. The effective oxide thickness for a 200 Å STO film is around 30 Å and is not sensitive to post-growth anneal in O2 at 500-700°C. These STO films are also robust against forming gas anneal. Finally, STO MOSFET structures have been fabricated and tested. An extrinsic carrier mobility value of 66 cm2 V−11 s−1 is obtained for an STO PMOS device with a 2 μm effective gate length.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below.

References

1 Tokumitu, E., Itani, K., Moon, B. and Ishiwara, H., Mater Res. Soc. Proc. 361, 427432 (1995).10.1557/PROC-361-427CrossRefGoogle Scholar
2 Sanchez, F., Varela, M., Queralt, X., Aguiar, R. and Morenza, J.L., Appl. Phys. Lett. 61(18), 22282230 (1992).10.1063/1.108276CrossRefGoogle Scholar
3 McKee, R.A., Walker, F.J. and Chisholm, M.F., Phys. Rev. Lett. 81(14), 30143017 (1998).10.1103/PhysRevLett.81.3014CrossRefGoogle Scholar
4 Tambo, T., Nakamura, T., Maeda, K., Ueba, H. and Tatsuyama, C., Jpn. J. Appl. Phys. (part 1) 37(18), 4454–9 (1998).10.1143/JJAP.37.4454CrossRefGoogle Scholar
5 Sanchez, F., Aguiar, R., Trtik, V., Guerrero, C., Ferrater, C. and Varela, M., J. Mater Res. 13(6), 1422–5 (1998).10.1557/JMR.1998.0202CrossRefGoogle Scholar
6 Nakagawara, O., Kobayashi, M., Yoshino, Y., Katayama, Y., Tabata, H. and Kawai, T., J. Appl. Phys. 78(12), 7226–30 (1995).10.1063/1.360433CrossRefGoogle Scholar
7 Moon, B.K. and Ishiwara, H., Jpn. J. Appl. Phys. 33(3A) (part 1), 1472–77 (1994).10.1143/JJAP.33.1472CrossRefGoogle Scholar
8 Mori, H. and Ishiwara, H., Jpn. J. Appl. Phys. 30(8A), L1415–L1417 (1991).10.1143/JJAP.30.L1415CrossRefGoogle Scholar
9 Yu, Z., et al. , (in preparation).Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 23 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 8th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *