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Properties of Electrolyte and Electrode Films Prepared by RF and DC Magnetron Sputtering*

Published online by Cambridge University Press:  21 February 2011

J. B. Bates
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6030
N. J. Dudney
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6030
Y. T. Chu
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6030
P. Mazumdar
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6030
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Extract

Increased interest in ion conducting thin films and thin-film devices is evidenced by the number of papers on this topic presented at the recent Garmisch conference [1[. Magnetically enhanced (magnetron) sputtering [2,3] is an important technique for depositing these as well as other kinds of ceramic thin films. Two advantages of magnetron over conventional diode sputtering are the increased sputtering rate, which is important in the deposition of ceramic materials, and the reduction in electron bombardment of the substrate and growing film. In this paper, we describe our high-vacuum film growth chamber and present the results of tests of this system in fabricating films of lithium ion conducting glass electrolytes, TiS2, and vanadium oxide by reactive dc and rf magnetron sputtering. The results of combining these films into a thin film lithium battery also are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract No. ACO5-84OR21400 with Martin Marietta Energy Systems, Inc.

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