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The Properties of a Plasma Deposited Candidate Insulator for Future Multilevel Interconnects Technology.

Published online by Cambridge University Press:  25 February 2011

A. V. Gelatos ,
C. J. Mogab ,
N. C. Saha  and
N. Parikh
A. V. Gelatos
Affiliation:
Advanced Products Research and Development Laboratory, Motorola Inc., Austin, TX. 78721.
C. J. Mogab
Affiliation:
Advanced Products Research and Development Laboratory, Motorola Inc., Austin, TX. 78721.
N. C. Saha
Affiliation:
Advanced Technology Center, Motorola Inc., Mesa, AZ. 85202.
N. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC. 27514.
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Abstract

Results are reported from an investigation of the properties of boron nitride thin films. The BN films were deposited by the method of plasma enhanced chemical vapor deposition (PECVD) from mixtures of ammonia and diborane. The deposition variables were RF power, pressure, ammonia partial pressure, diborane partial pressure, diluent type (nitrogen or argon), and temperature. The films were characterized for their stoichiometry, hydrogen content, stress, refractive index, and especially for their dielectric properties. It was observed that the main parameters affecting the dielectric constant were the ratio of ammonia to diborane flow, and the deposition temperature. The dielectric constant decreased with increasing ammonia to diborane ratio, while it increased with decreasing deposition temperature. The lowest dielectric constant value achieved was 4.0 ·, 0.1. Nitrogen dilution allowed the deposition of boron nitride films with the lowest dielectric constant value at ammonia to diborane ratios smaller than those required under argon dilution, which suggests some incorporation of nitrogen into the boron nitride matrix from the diluent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 347
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Rand, M. J. and Roberts, J. F., J. Electrochem. Soc. 115, 423 (1968).CrossRefGoogle Scholar
[2] Hirayama, M. J. and Shonko, K., J. Electrochem. Soc. 122, 1671 (1975).CrossRefGoogle Scholar
[3] Yamaguchi, E. and Minakata, M., Ext. Abs. 15th Conf. Solid State Devices, Tokyo, 1983, p. 81.Google Scholar
[4] Hyder, S. B. and Yep, T. O. J. Electrochem. Soc. 123 1721 (1976).CrossRefGoogle Scholar
[5] Schmolla, W. and Hartnagel, H. L., Solid State Electron. 26, 931 (1983).CrossRefGoogle Scholar
[6] Miyamoto, H., Hirose, M. and Osaka, Y. Jpn. J. Appl. Phys. 22, L216 (1983).CrossRefGoogle Scholar
[7] Yuzuriha, T. H. and Hess, D. W., Thin Solid Films 140, 199 (1986).CrossRefGoogle Scholar
[8] Maeda, M. and Makino, T., Jpn. J. Appl. Phys. 26, 660 (1987).CrossRefGoogle Scholar
[9] Noreika, A. J. and Frankombe, M. H., J. Vac Sci. Technol. 6, 722 (1969).CrossRefGoogle Scholar
[10] Box, G. E. P., Huner, W. G. and Hunter, J. S., “Statistics for Experimenters” Wiley, J. and Sons eds., 1978.Google Scholar
[11] Jousse, D. L., Kanicki, J., Krick, D. T., and Lenahan, P. M., Appl. Phys. Lett. 51, 608 (1987).Google Scholar
[12] Parikh, N. R., et al., Proceedings of the Society of Photo Optical Instrumentation Engineers 969, 95 (1988).Google Scholar