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Profile Simulation of Reactive Ion Etching for Silicon Tip-on-Post and Bottle-Neck Structures in Fed Applications

Published online by Cambridge University Press:  10 February 2011

A. R. Zoulkarneev ,
J. M. Kim ,
J. P. Hong ,
J. H. Choi  and
V. V. Michine
A. R. Zoulkarneev
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea, 440–600
J. M. Kim
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea, 440–600
J. P. Hong
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea, 440–600
J. H. Choi
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea, 440–600
V. V. Michine
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea, 440–600
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Abstract

This articles describes an investigation of the reactive ion etching of tip-on-post and bottle-neck silicon structures used for fabrication field emission devices. The analytical study for the angular distribution of incident etching ions is presented by the simulation with temporal profile evolution. The surface simulations are compared with experimental results. This comparison shows that numerical expression for the angular distribution could be applied for incident ion flux in case tip-on-post and bottle-neck silicon structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 241
Copyright
Copyright © Materials Research Society 1997

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References

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