Hostname: page-component-84b7d79bbc-4hvwz Total loading time: 0 Render date: 2024-07-25T10:23:30.290Z Has data issue: false hasContentIssue false
  • English
  • Français

Processing and Structural Characterization of Ferroelectric Thin Films Deposited by Ion Beam Sputtering

Published online by Cambridge University Press:  16 February 2011

M. S. Ameen ,
T. M. Graettinger ,
S. H. Rou ,
H. N. Al-Shareef ,
K. D. Gifford ,
O. Auciello  and
A. I. Kingon
M. S. Ameen
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC, 27695–7919.
T. M. Graettinger
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC, 27695–7919.
S. H. Rou
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC, 27695–7919.
H. N. Al-Shareef
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC, 27695–7919.
K. D. Gifford
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC, 27695–7919.
O. Auciello
Affiliation:
Also, Microelectronics Center of N. C., Research Triangle Park, NC, 27909–2889
A. I. Kingon
Affiliation:
Department of Materials Science and Engineering, N. C. State University, Raleigh, NC, 27695–7919.
Get access

Abstract

An analysis is presented of the ion beam sputter deposition of ferroelectric KNbO3 and Pb(Zr, Ti)O3 (PZT), and the observed compositional, structural, and microstructural properties of these films. Films are deposited using a specially designed computer-controlled system with ability to produce multicomponent films via layer-by-layer deposition of elemental components. Metal or oxide targets are sequentially exposed to a high current ion beam by means of a rotatable target holder. A quartz crystal resonator provides feedback information on layer thicknesses to the computer. Precise control of film stoichiometry is obtained using this method.

KNbO3, a material possessing a high figure-of-merit for electrooptic applications, has been deposited epitaxially on (100) MgO substrates. The structure of the optically transparent films has been studied with x-ray and electron diffraction, and transmission electron microscopy. The effects of various processing parameters on the microstructure of the films are discussed.

We have demonstrated the ability of the technique to produce multicomponent films and control cation concentration at elevated substrate temperatures for materials such as PZT. The microstructure and associated ferroelectric properties are discussed in relation to processing conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 65
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hong, M., et at., Appl. Phys. Lett. 53, 2102(1988).Google Scholar
2. Rossnagel, S. M., Cuomo, J. J.,. AlP Conference Proceedings No. 165 106(1988).Google Scholar
3. Kingon, A. I., Auciello, O., Ameen, M. S., Rou, S. H., Krauss, A. R., Appl. Phys. Lett. 55, 301 (1989).Google Scholar
4. Ameen, M. S., Auciello, O., Kingon, A. I., Krauss, A. R., Ray, M. A., AlP Conf. Proc. No. 200, 79 (1990).Google Scholar
5. Auciello, O., Ameen, M. S., Kingon, A. I., Krauss, A. R., Ray, M. A.. Materials Research Society Conference Proceedings, in press.Google Scholar
6. Tuttle, B. A., in MRS Bulletin Oct/Nov1987, pp. 40.Google Scholar
7. Rou, S. H., Hren, P. D., Kingon, A. I., in MRS Spring Meeting, San Francisco, 1990, in press.Google Scholar
8. Rou, S. H., Hren, P. D., Hren, J. J., Graettinger, T. M., Ameen, M. S., Auciello, O., Kingon, A. I., MRS Spring Meeting, San Francisco, 1990, in pressGoogle Scholar
9. Ogawa, S., Watanabe, D., Watanabe, H., Komoda, T., Acta. Cryst. 11(1958).Google Scholar
10. Bursill, L. A., Lin, P. J., Duan, F., Phil. Mag. 48, 953(1983 ). Google Scholar
11. Lin, P. J., Bursill, L. A., Phil. Mag. 48, 251 (1983).Google Scholar
12. Graettinger, T. M., Rou, S. H., Ameen, M. S., Auciello, O., Kingon, A. I., SPIE Conf. Proc. No. 1323, in press.Google Scholar
13. Castellano, R. N., Feinstein, L. G., J. Appl. Phys. 50 , 4406(1979).Google Scholar
14. Sundgren, J.-E., Johansson, B. O., Rockett, A., Barnett, S. A., Greene, J. E., MRS Conf. Proc. 149, 95(1986).Google Scholar