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Processing and Piezoelectric Properties of Mod Pzt Films and Pzt/Polymer Composite Coatings

Published online by Cambridge University Press:  10 February 2011

J.S. Wright  and
L.F. Francis
J.S. Wright
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455wrigh012@maroon.tc.umn.edu, lfrancis@rmaroon.tc.umn.edu
L.F. Francis
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455wrigh012@maroon.tc.umn.edu, lfrancis@rmaroon.tc.umn.edu
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Abstract

Lead zirconate titanate, Pb(Zr0.53Ti0.47)O3 (PZT), coatings were prepared using a metallorganic decomposition (MOD) route with lead and titanium acetates and zirconium acetylacetonate in acetic acid and water. Films with thickness of 0.66 μm were prepared on (100) Si with a layered bottom electrode (Pt/Ti/TiO2/SiO2). Dielectric constant and loss were 1100 and 0.04 (1 kHz), respectively, and remnant polarization and coercive field were 30 μC/cm2 and 40 kV/cm. Piezoelectric coefficient (d33) of the PZT film, measured with a singlebeam laser interferometer, was 41 pm/V. Standard micromachining techniques were used to etch the PZT to form discrete PZT posts for preparation of the ceramic phase for composite coatings with a 1–3 connectivity. SEM was used to determine the dense and etched film microstructure. Preliminary ion milling results, used to etch the PZT, are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 357
Copyright
Copyright © Materials Research Society 1996

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References

1. See for example: Smith, W. A., Proceedings of the 1989 IEEE Ultrasonics Symposium, 755 (1989); C. Richard, P. Eyraud, L. Eyraud, Ms. M. Richard and G. Grange, Ferroelectrics 134, 59 (1992); R. Y. Ting, Ferroelectrics 102, 215 (1990); A. Safari, J. Phys. III France 4, 1129 (1994); D. P. Skinner, R. E. Newnham and L. E. Cross, Materials Research Bulletin 13, 599 (1978).Google Scholar
2. Lin, C. T., Li, L., Webb, J. S., Lipeless, R. A. and Leung, M. S., Integrated Ferroelectrics 3, 333 (1993).Google Scholar
3. Kang, J., Yoko, T., and Saka, S., Japanese Journal of Applied Physics 30 (9B), 2182 (1991).Google Scholar
4. Tu, Y. L. and Milne, S. J., J. Mater. Res. 10 (12), 3222 (1995); D. Dimos, R. W. Schwartz, S. J. Lockwood, J. Amer. Ceram. Soc. 77 (11), 3000 (1994).Google Scholar
5. Li, I.-F., Moses, P., and Viehland, D., Rev. Sci. Instrum. 66 (1), 215 (1995).Google Scholar
6. Zhang, Q. M., Pan, W. Y. and Cross, L. E., J. Appl. Phys. 63 (8), 2492 (1988).Google Scholar
7. Kholkin, A. L., Wutchrich, Ch., Taylor, D. V., and Setter, N., submitted to Rev, of Sci. Instruments (1995).Google Scholar