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Preparation of sub-100nm Thickness PZT thin Films with Chemical Solution Deposition Method for low Voltage Operation

Published online by Cambridge University Press:  21 March 2011

Yong Kyun Lee
Affiliation:
Microelectronics Lab, Material and Device Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea 440-600 Phone:82-31-280-9336, fax:82-31-280-9349, Email: yklee@sait.samsung.co.kr
June Key Lee
Affiliation:
Microelectronics Lab, Material and Device Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea 440-600 Phone:82-31-280-9336, fax:82-31-280-9349, Email: yklee@sait.samsung.co.kr
Chang Jung Kim
Affiliation:
Microelectronics Lab, Material and Device Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea 440-600 Phone:82-31-280-9336, fax:82-31-280-9349, Email: yklee@sait.samsung.co.kr
Insook Yi
Affiliation:
Microelectronics Lab, Material and Device Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea 440-600 Phone:82-31-280-9336, fax:82-31-280-9349, Email: yklee@sait.samsung.co.kr
Ilsub Chung
Affiliation:
Microelectronics Lab, Material and Device Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea 440-600 Phone:82-31-280-9336, fax:82-31-280-9349
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Abstract

PZT thin films with a thickness of 70 nm were successfully fabricated using a modified solution combined with PbTiO3 seed layer. Throughout various approaches, we found that the microstructure of PZT thin film plays an important role in determining the electrical properties such as hysteretic properties and leakage currents, particularly when the thickness is below 100 nm. We modified the precursor system to improve the microstructure in PZT thin film. In addition, we also adopted a thin PbTiO3 seed layer to enhance the initial nucleation density. Finally, we could obtain good electric properties similar to those obtained from 240 nm thick PZT film. The hysteretic properties is excellent enough to operate at a low voltage (2V) for a high density FRAM application.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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