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Preparation of SrTiO3 Thin Films by Ecr and Thermal Mocvd

Published online by Cambridge University Press:  21 February 2011

P-Y. Lesaicherre ,
H. Yamaguchi ,
T. Sakuma ,
Y. Miyasaka ,
M. Yoshida  and
A. Ishitani
P-Y. Lesaicherre
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, Sagamihara, Kanagawa 229
H. Yamaguchi
Affiliation:
Fundamental Research Laboratories, NEC Corporation, Kawasaki, Kanagawa 216, Japan
T. Sakuma
Affiliation:
Fundamental Research Laboratories, NEC Corporation, Kawasaki, Kanagawa 216, Japan
Y. Miyasaka
Affiliation:
Fundamental Research Laboratories, NEC Corporation, Kawasaki, Kanagawa 216, Japan
M. Yoshida
Affiliation:
Fundamental Research Laboratories, NEC Corporation, Kawasaki, Kanagawa 216, Japan
A. Ishitani
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, Sagamihara, Kanagawa 229
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Abstract

SrTiO3 thin films were prepared by ECR and thermal MOCVD. In thermal-CVD mode, Sr content and Ti content were at a maximum at 0.56 Torr. Results showed that SrO deposition is a surface reaction limited process between 500 and 650°C, whereas TiO2 deposition is surface reaction limited between 500 and 600 °C, and diffusion limited above 600 °C. At a low pressure of 8 mTorr, ECR oxygen plasma was found to help decompose Ti(i-OC3H7)4. In ECR-CVD mode, the deposition temperature could be lowered to 400 °C. TEM and SEM analyses showed that SrTiO3 thin films have a columnar structure. The size of the grains depends on film thickness, and their shape on film composition (Sr/Ti ). Films prepared by thermal-CVD had a lateral step coverage of 50 %. 40 nm SrTiO3 thin films (Sr/Ti = 1.0) prepared by thermal-CVD on Pt/TaOx/Si and annealed for 2 hours in O2 had a maximum dielectric constant of 139 (Cs = 31 fF/μm2 and teq = 1.1 nm) and a leakage current density of 6x10−8 A/cm2 at 1.0 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 487
Copyright
Copyright © Materials Research Society 1993

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