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Preparation of Semiconductor Cross Sections by Cleaving

Published online by Cambridge University Press:  21 February 2011

Crispin J. D. Hetherington*
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
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Abstract

The practical details are presented for preparing cross-sectional samples of semiconductor epitaxial layers by cleaving. Examples of results are shown and a number of possible applications for the samples are discussed. A variation of the method can be used to prepare a TEM sample of a high Tc superconductor.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

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