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Preparation and Evaluation of p-Type Materials for a-Si Solar Cells Using DC Plasma Discharge Deposition of Trimethylboron (B(CH3)3)
Published online by Cambridge University Press: 25 February 2011
Abstract
Amorphous SiC p-layers doped with trimethylboron (B(CH3) 3) were prepared with optical and electrical properties superior to those prepared with B2H6. Devices were prepared with efficiencies as high as 11.4% using trimethyl boron. The improved properties of B(CH3)3-doped a-SiC result from the fact that trimethylboron is a more effective doping agent than B2H6 and produces p-layers with a higher bandgap.
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