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Preparation and Characterization of Silicon Nanocrystals in a SiO2 Matrix and Study of Suboxide Stability

Published online by Cambridge University Press:  15 February 2011

B. J. Hinds ,
A. Banerjee ,
R. S. Johnson  and
G. Lucovsky
B. J. Hinds
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
A. Banerjee
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
R. S. Johnson
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

The kinetics of the decomposition of silicon suboxides (SiOx, x<2) to Sic + SiO2 was studied as a function of composition and post-deposition annealing. Amorphous hydrogenated SiOx films (0.8<x<1.4) were deposited by remote plasma enhanced chemical vapor deposition (RPECVD) and rapid thermal annealed (RTA) at temperatures of 500–1000°C. By monitoring the Si-O infra-red (IR) bond-stretch mode frequency, it was found that at temperatures below 850°C, or at a oxygen poor composition near SiO0.8, the decomposition reaction only proceeded to a metastable form of SiO1.6 + Si. Characterization by Raman and spectroscopie ellipsometry confirm similar trends. Cross sectional transmission electron microscopy (TEM) confirms that Si nanocrystals (Sine) are formed with anneals at 900°C (30 sec). As deposited suboxides show band edge photoluminescence at 1.6 eV which disappears upon annealing at 900°C, indicating a sharp suboxide free interface between Sinc and SiO2 matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 207
Copyright
Copyright © Materials Research Society 1997

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Footnotes

†

Present address: Texas Instrument Incorporated, MS 944, Dallas TX 75243

References

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