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Preliminary Electrical Characterization of Pulsed-Plasma Enhanced Chemical Vapor Deposited Teflon-like Thin Films

Published online by Cambridge University Press:  15 February 2011


Catherine B. Labelle
Affiliation:
Department of Chemical Engineering, MIT Cambridge, MA 02139
Scott J. Limb
Affiliation:
Department of Chemical Engineering, MIT Cambridge, MA 02139
Karen K. Gleason
Affiliation:
Department of Chemical Engineering, MIT Cambridge, MA 02139
James A. Burns
Affiliation:
MIT Lincoln Laboratory Lexington, MA 02173

Abstract

Pulsed-rf excitation of hexafluoropropylene oxide (HFPO) has been used to deposit films with chemical compositions similar to poly(tetrafluoroethylene) (PTFE). Films were deposited at pulse cycles of 10/20, 10/50, 10/200, and 10/400 ms on/ms off and analyzed using electron spin resonance spectroscopy (ESR). All four films produced similar broad ESR spectra, with an average width at maximum slope of ˜60 G and a g-value of 2.0045. The concentration of free electrons in a sample decreased with increasing pulse off time. This behavior can be modeled by the reaction of a free radical with a gas species, assuming that free radicals are generated only during the pulse on time. The films' dielectric constants were found to decrease from 1.99 to 1.95 for pulse off times increasing from 20 to 400 ms.


Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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Preliminary Electrical Characterization of Pulsed-Plasma Enhanced Chemical Vapor Deposited Teflon-like Thin Films
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