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Positive Temperature Coefficient of Resistance in MOCVD (Ba0.75Sr0.25)Ti1+yO3+z Films

Published online by Cambridge University Press:  11 February 2011

S. Saha
Affiliation:
Materials Science Division and Argonne National Laboratory, Argonne, IL-60439, USA
D. Y. Kaufman
Affiliation:
Energy Technology Division, Argonne National Laboratory, Argonne, IL-60439, USA
S. K. Streiffer
Affiliation:
Materials Science Division and Argonne National Laboratory, Argonne, IL-60439, USA
R. A. Erck
Affiliation:
Energy Technology Division, Argonne National Laboratory, Argonne, IL-60439, USA
O. Auciello
Affiliation:
Materials Science Division and Argonne National Laboratory, Argonne, IL-60439, USA
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Abstract

The leakage and dielectric properties of a thickness series (90–480 nm) of {100} fiber-textured MOCVD (Ba0.75Sr0.25)Ti1+yO3+z (BST) thin films on Pt/SiO2/Si were investigated. The temperature and voltage dependence of the permittivity were consistent with previous observations, where thinner films demonstrated a suppressed temperature and electric field response that transitioned to a more bulk-like response with increasing film thickness. The current-voltage characteristics showed two distinct regimes. At low fields the current displayed weak field dependence and a monotonic increase with increasing temperature. In contrast, positive temperature coefficient of resistance (PTCR) was observed in the high-field leakage current behavior. The PTCR behavior was more pronounced for thicker BST films. Factors contributing to the observed PTCR effect are outlined and contrasted with the description for bulk BaTiO3 ceramics.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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Positive Temperature Coefficient of Resistance in MOCVD (Ba0.75Sr0.25)Ti1+yO3+z Films
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