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Physics-Based Intrinsic Model for AlGaN/GaN HEMTs
Published online by Cambridge University Press: 15 February 2011
Abstract
DC and intrinsic small signal parameters are reported for AlGaN/GaN high electron mobility transistors. The calculations are based upon a self-consistent solution of Schrödinger and Poisson's equation to model the quantum well formed in GaN. Transport parameters are obtained from an ensemble Monte Carlo simulation.
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- Copyright © Materials Research Society 1999
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