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Photoconductivity of a-Si:H as a Function of Doping, Temperature and Photocarrier Generation Rates Between 1013 and 1028cm-3s-1

Published online by Cambridge University Press:  10 February 2011

P. Stradins ,
H. Fritzsche ,
N. Kopidakis  and
P. Tzanetakis
P. Stradins
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
H. Fritzsche
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
N. Kopidakis
Affiliation:
Institute of Electronic Structure and Laser, FORTH, 71110 Heraklion, Crete, Greece
P. Tzanetakis
Affiliation:
Institute of Electronic Structure and Laser, FORTH, 71110 Heraklion, Crete, Greece
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Abstract

The steady state photoconductivity up of n-type, p-type and intrinsic a-Si:H has been studied up to photocarrier generation rates of G=5×1027cm-3s-1. In the 20ppm B2H6/SiH4 p-type sample photoconduction switches from holes at low G to electrons at high G. The electron photoconduction at high G is increased by n-type and decreased by p-type doping. This is explained by the charge state of the dominant electron recombination centers. The σp(G) curves of doped and intrinsic a-Si:H merge at the highest G used.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 765
Copyright
Copyright © Materials Research Society 1996

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