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Phase Mapping Sputter Deposited Wide Band-Gap Metal Oxides

Published online by Cambridge University Press:  25 February 2011

C.R. Aita ,
R.C. Lee ,
C.-K. Kwok  and
E.A. Kolawa
C.R. Aita
Affiliation:
Materials Department, University of Wisconsin-Milwaukee, P.O. Box 784, Milwaukee, WI 53201
R.C. Lee
Affiliation:
Materials Department, University of Wisconsin-Milwaukee, P.O. Box 784, Milwaukee, WI 53201
C.-K. Kwok
Affiliation:
Materials Department, University of Wisconsin-Milwaukee, P.O. Box 784, Milwaukee, WI 53201
E.A. Kolawa
Affiliation:
Department of Electrical Engineering, California Institute of Technology, Pasadena, CA 91125
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Abstract

Reactive sputter deposition is a widely-used process for growing films of high melting point materials near room temperature and desirable metastable structures not attainable in material grown under conditions of thermodynamic equilibrium. Both categories include wide band-gap metal oxides. A first step towards reproducible growth is to develop a “phase map” for the metal-oxygen system of interest. The map graphically relates independent sputter deposition process parameters, the growth environment, and the metallurgical phase(s) formed in the film. This paper shows how phase maps are constructed and used to observe general trends in oxide phase formation sequence, with examples from the Nb-O, Y-O, and Zr-O systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 737
Copyright
Copyright © Materials Research Society 1992

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References

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