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Performance Comparison and Design Issue on Different GaN Power Transistor Structures

Published online by Cambridge University Press:  17 May 2012

Chwan-Ying Lee
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Chien-Chung Hung
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Wei-Hung Kuo
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Young-Shying Chen
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Lurng-Shehng Lee
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Cheng-Tyng Yen
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Suh-Fang Lin
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Rong Xuan
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Tzu-Kun Ku
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Ming-Jinn Tsai
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
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Abstract

Three types of Ganium Nitride (GaN) transistors were studied in this work. The devices were fabricated and exhibited unique characteristics over on-state current and off-state blocking performances. We also compared the performance differences of devices fabricated by multiepitaxial GaN/AlGaN layers on different substrates (Sapphire and Si) and evaluated the correlations among starting substrate, device variation, and manufacturing uniformity. The first device is a normally-on device with Sapphire substrate which shows good drain saturation current (Idsat) and breakdown characteristics, but the gate leakage current is quite large. The second device is a normally-off GaN transistor named metal-insulate-semiconductor (MIS) heterojunction field-effect transistor (MIS-HFET) which exhibits good performance with threshold voltage (Vth) of 3V and breakdown voltage (Vbd) of over 1800V. However the third device is a normally-off GaN metal-oxide-semiconductor field-elect transistor (MOSFET) structure which is rather difficult to exhibit good blocking characteristic due to inadequate doping process control of the reduce-surface-field (RESURF) region.

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

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References

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