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Optimization Of Porous Silicon Reflectance For Solar Cell Applications

Published online by Cambridge University Press:  10 February 2011

A. X. Coles ,
R. A. Gerhardt  and
A. Rohatgi
A. X. Coles
Affiliation:
Georgia Institute of Technology School of Materials Science and Engineering
R. A. Gerhardt
Affiliation:
Georgia Institute of Technology School of Materials Science and Engineering
A. Rohatgi
Affiliation:
School of Electrical and Computer Engineering, Atlanta, GA 30332–0245
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Abstract

The potential use of porous silicon as an antireflective coating on solar cells has recently been recognized. This study investigates the effect of current density, anodization time, and surface conditions on the reflectance of porous silicon which was fabricated by anodizing (100) float zone single crystal Si wafers. The wafers were coated on one side with Al prior to anodization, and a HFbased solution was used as the electrolyte. Current densities of 5 – 100 mA/cm2 were used to anodize both polished and unpolished wafers over time intervals ranging from 2sec - 30 minutes. Reflectance properties were tested over the 400 - 1100 nm range, and minimum reflectances of 3 – 5% were achieved. The reflectance of the best porous Si sample normalized with respect to the sun's spectrum compares favorably with the reflectance of a double layer ZnS/ MgF2 with prior texturing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 557
Copyright
Copyright © Materials Research Society 1996

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