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On the Use of MÖssbauer Nuclei as Probes of Radiation Induced Effects at Interfaces

Published online by Cambridge University Press:  25 February 2011

P. A. Ingemarsson
Affiliation:
Dept. of Radiation Sciences, Uppsala University, Box 535, S-751 21 Uppsala, Sweden
T. Ericsson
Affiliation:
Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala, Sweden
G. Possnert
Affiliation:
The Svedberg Laboratory, Box 533, S-751 21 Uppsala, Sweden
R. Wappling
Affiliation:
Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala, Sweden
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Abstract

Conversion electron M6ssbauer spectroscopy was used as a means of investigating radiation induced changes at thin film interfaces. 25 Å thick layers of 57Fe were evaporated onto substrates of Si,SiO2 and A12O3 andcovered with 150 Å 56Fe. Samples were then subjected to ion irradiation with 20 MeV C14+ to doses ranging from 1012 to 2x 1014 ions/cm2 and subsequently annealed in vacuum at 450 ºC. Mössbauer spectra were recorded before and after each step. The analysis revealed chemical alterations, induced by the ion bombardment, indicative of film-substrate bond formation and reconstruction of residual surface hydrocarbons. The results are interpreted in view of accompanying enhancements in thin film adhesion.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

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