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On the Origin of Visible Luminescence from SIO2 Films Containing Ge Nanocrystals

Published online by Cambridge University Press:  15 February 2011

K. S. Min ,
K. V. Shcheglov ,
C. M. Yang ,
R. P. Camata ,
Harry A. Atwater ,
M. L. Brongersma  and
A. Polman
K. S. Min
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125.
K. V. Shcheglov
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125.
C. M. Yang
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125.
R. P. Camata
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125.
Harry A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125.
M. L. Brongersma
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands.
A. Polman
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands.
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Abstract

Synthesis of Ge nanocrystals in SiO2 is carried out by precipitation from a supersaturated solid solution of Ge in SiO2 made by Ge ion implantation. The SiO2films containing Ge nanocrystals show intense visible photoluminescence at room temperature that is very similar in spectral features to that of SiO2 containing Ge nanocrystals synthesized by other methods, such as co-sputtering and hydrothermal reduction. The dependence of the measured peak luminescence energy on the nanocrystal diameter shows a poor correlation compared to the calculated sizedependent exciton energy for Ge ‘quantum dot’ states. The measured luminescence lifetimes are much shorter than those predicted by calculated radiative decay rates for the observed size range. The photoluminescence spectra show only a weak temperature dependence. In addition, very similar photoluminescence spectra have also been observed from Xe+-implanted SiO2with damage profiles similar to Ge+-implanted SiO2. Furthermore, the luminescence has been shown to be reversibly quenched by deuterium. These results indicate that the process responsible for visible photoluminescence is not the radiative recombination of excitons in Ge ‘quantum dots’ but is instead related to luminescent radiative defect centers in the matrix or at the nanocrystal/matrix interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 247
Copyright
Copyright © Materials Research Society 1996

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