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On the Origin of EL2 Intracenter Absorption Band in GaAs

Published online by Cambridge University Press:  26 February 2011

M. Skowronski
M. Skowronski*
Affiliation:
Cabot Corporation, Concord Road, Billerica, Massachusetts, 01821
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Abstract

An alternative interpretation of optical absorption spectra due to intracenter transition within EL2 defect in GaAs is provided. The arguments are presented that states originating from the L-valley of the conduction band can account for the presence of the wide absorption band, the no-phonon line and the observed uniaxial stress splittings. Using the analogy to the DX center, this model presents an explanation for the existence of the metastable state of EL2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 405
Copyright
Copyright © Materials Research Society 1988

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References

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