Hostname: page-component-77c89778f8-fv566 Total loading time: 0 Render date: 2024-07-25T05:11:51.596Z Has data issue: false hasContentIssue false
  • English
  • Français

Normally Off-Mode AlGaN/GaN HFET with p-Type Gate Contact

Published online by Cambridge University Press:  01 February 2011

Norio Tsuyukuchi ,
Kentaro Nagamatsu ,
Yoshikazu Hirose ,
Motoaki Iwaya ,
Satoshi Kamiyama ,
Hiroshi Amano  and
Isamu Akasaki
Norio Tsuyukuchi
Affiliation:
m0534016@ccmailg.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, N/A, 468-8502, Japan, +81-52-832-1151, +81-52-832-1298
Kentaro Nagamatsu
Affiliation:
m0534021@ccmailg.meijo-u.ac.jp
Yoshikazu Hirose
Affiliation:
m0434034@ccmailg.meijo-u.ac.jp
Motoaki Iwaya
Affiliation:
iwaya@ccmfs.meijo-u.ac.jp
Satoshi Kamiyama
Affiliation:
skami@ccmfs.meijo-u.ac.jp
Hiroshi Amano
Affiliation:
amano@ccmfs.meijo-u.ac.jp
Isamu Akasaki
Affiliation:
akasaki@ccmfs.meijo-u.ac.jp
Get access

Abstract

A normally off-mode AlGaN/GaN heterostructure field effect transistor (HFET) using a p-type GaN gate was fabricated and their static properties were compared with those of HFET having a Schottky gate. HFET having a p-GaN gate contact shows a very low leakage current density of 18.2 μA/mm at VGS and VDS of 0 V and 20 V, respectively.

Keywords

nitridetransparent conductordevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF15-03
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

1. Okumura, H.: Oyo Butsuri. Phys. 73 (2004) 315 [in Japanese]Google Scholar
2. Moon, J. S., Wong, D., Hussain, T., Micovic, M., Deelman, P., Hu, M., Antclifee, M., Ngo, C., Hashimoto, P. and McCray, L.: Conf. Dig. 60th Device Research Conf. (2002) 23.CrossRefGoogle Scholar
3. Endoh, A., Yamashita, Y., Ikeda, K., Higashiwaki, M, Hikosaka, K., Matsui, T., Hiyamizu, S. and Mimura, T.: Jpn. J. Appl. Phys. 43 (2004) 2258.Google Scholar
4. Hashizume, T., Anantathanasarn, S., Negoro, N., Sano, E., Hasegawa, H., Kumakura, K. and Makimoto, T.: Jpn. J. Appl. Phys. 43 (2004) 777.CrossRefGoogle Scholar
5. Hu, X., Simin, G., Yang, J., Asif Khan, M., Gaska, R. and Shur, M. S.: Elee. Lett. 36 (2000) 753.Google Scholar
6. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y.: Appl. Phys. Lett. 48 (1986) 353.CrossRefGoogle Scholar
7. Tsuyukuchi, N., Nagamatsu, K., Hirose, Y., Iwaya, M., Kamiyma, S., Amano, H. and Akasaki, I.: submitted to Jpn. J. Appl. Phys.Google Scholar
8. Kumakura, K., Makimoto, T., Kobayashi, N., Hashizume, T., Fukui, T. and Hasegawa, H.: Appl. Phys. Lett. 86 (2005) 052105.CrossRefGoogle Scholar