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Nonvolatile Two-Terminal Molecular Memory

Published online by Cambridge University Press:  01 February 2011


Jason Snodgrass
Affiliation:
jsnodgrass@mail.unomaha.edu, University of Nebraska Omaha, Omaha, NE, 68182-0226, United States
Glen Kennedy
Affiliation:
gkennedy@mail.unomaha.edu, University of Nebraska Omaha, Omaha, NE, 68182-0226, United States
Wai-Ning Mei
Affiliation:
wmei@mail.unomaha.edu, University of Nebraska Omaha, Omaha, NE, 68182-0226, United States
Renat Sabirianov
Affiliation:
rsabirianov@mail.unomaha.edu, University of Nebraska Omaha, Omaha, NE, 68182-0226, United States

Abstract

We propose a nonvolatile two-terminal memory with two resistance states based on the molecular tunnel junctions. This tunnel junction is composed of one or few monolayers of polar molecules sandwiched between two electrodes made of materials with different screening length. As a prototype model system we study rare earth endohedral metallofullerene molecule with reversible dipole moment sandwiched by metal and semiconducting electrodes forming a double barrier junction. We use the Thomas-Fermi model to calculate the potential profile across the device. Calculated tunneling conductance through the proposed structure changes by order of magnitude upon the reversal of the dipole orientation (due to the applied voltage). This effect originates from the difference of potential profile seen by tunneling electrons for two opposite dipole orientations.


Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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