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New Line of Solid Solution System of Oxide Ferroelectrics

Published online by Cambridge University Press:  11 February 2011

Takeshi Kijima
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
Hiroshi Ishiwara
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
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Abstract

Ferroelectric random access memory is one of the most promising candidates of non-volatile memories and has already been commercialized. However there still exist some problems to be solved on the ferroelectric materials. We succeeded in solving these problems by forming solid solutions between Bi2SiO5 and conventional ferroelectric materials such as Bi4Ti3O12, SrBi2Ta2O9 and Pb(Zr,Ti)O3. It was found that Bi2SiO5 enhanced crystallization of the ferroelectric materials and finally formed solid solutions with them. As a result, the crystallization temperature of the films decreased by 150 to 200 °C, and the ferroelectric and leakage current characteristics did not degrade even in an ultra-thin film of 13 nm in thickness. On the other hand, it was also found that the ferroelectric and insulating characteristics of the BSO-added films were dramatically improved by annealing in high-pressure oxygen up to 9.9 atms.[1] Three-orders-of-magnitude improvement of the leakage current density was observed in BSO-added BLT films after annealing at 9.9 atms, while pronounced increase of the saturation polarization was observed in BSO-added SBT and PZT films. From cross-sectional TEM (Transmission electron microscopy) observation, origin of the improved characteristics was speculated to be the structural change of the films.[2]

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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