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Nanostructures with Group IV Nanocrystals Obtained by LPCVD and Thermal Annealing of SiGeO Layers

Published online by Cambridge University Press:  01 February 2011

Bruno Morana
Affiliation:
bmorana@etsit.upm.es, Universidad Politécnica de Madrid, E.T.S.I.T., Tecnología Electrónica, Madrid, 28040, Spain
Andrés Rodríguez
Affiliation:
andres.rodriguez.dominguez@upm.es, Universidad Politécnica de Madrid, Tecnología Electrónica, Ciudad Universitaria s/n, Madrid, 28040, Spain
Jesús Sangrador
Affiliation:
jsangra@etsit.upm.es, Universidad Politécnica de Madrid, E.T.S.I.T., Tecnología Electrónica, Madrid, 28040, Spain
Tomás Rodríguez
Affiliation:
tomas@etsit.upm.es, Universidad Politécnica de Madrid, E.T.S.I.T., Tecnología Electrónica, Madrid, 28040, Spain
Óscar Martínez
Affiliation:
omartinez@fmc.uva.es, U. de Valladolid, E.T.S.I.I., Física de la Materia Condensada, Valladolid, 47011, Spain
Juan Jiménez
Affiliation:
jimenez@fmc.uva.es, U. de Valladolid, E.T.S.I.I., Física de la Materia Condensada, Valladolid, 47011, Spain
Andreas Kling
Affiliation:
akling@mcts.itn.pt, Universidade de Lisboa, Centro de Física Nuclear, Lisbon, 1649-003, Portugal
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Abstract

Nanocrystals embedded in an oxide matrix have been fabricated by annealing SiGeO films deposited by LPCVD. The composition of the oxide layers and its evolution after annealing as well as the presence and nature of nanocrystals in the films have been studied by several experimental techniques. The results are analyzed and discussed in terms of the main deposition parameters and the annealing temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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Nanostructures with Group IV Nanocrystals Obtained by LPCVD and Thermal Annealing of SiGeO Layers
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