Hostname: page-component-84b7d79bbc-x5cpj Total loading time: 0 Render date: 2024-07-31T03:19:02.213Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanoscratch Deformation Response of Carbon Nitride Thin Films

Published online by Cambridge University Press:  17 March 2011

C. Charitidis ,
P. Patsalas  and
S. Logothetidis
C. Charitidis
Affiliation:
Department of Physics, Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece
P. Patsalas
Affiliation:
Department of Physics, Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece
S. Logothetidis
Affiliation:
Department of Physics, Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece
Get access

Abstract

The mechanical performance of thin carbon nitride (CNx) films deposited onto Si(100) substrate by sputtering, was investigated in the load range of 2-20 mN using nanoindentation and nanoscratch techniques. The microstructure of these films was characterized by the inhomogeneous embedding of crystalline grains into a N-poor amorphous matrix. A load dependent transition was found in both the scratch, as well as the friction responses. Below 5 mN, nanoscratching showed completely elastic behavior of the film, while above 10 mN a mixed elastic-plastic behavior was identified. Testing under a normal load of 20 mN resulted in local grooving at the film surface; however, in-situ profiling of the scratch trace showed no evidence of film failure. Both the coefficient of friction (μ), as well as the plastic deformation of the films were found increasing with the normal load applied following an exponential low.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 649: Symposium Q – Fundamentals of Nanoindentation & Nanotribology II , 2000 , Q7.19
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Liu, A. Y. and Cohen, M. L., Science 245, 841 (1989).Google Scholar
2. Liu, A. Y. and Cohen, M. L., Phys. Rev. B 41, 10727 (1990).Google Scholar
3. Yu, K. M., Cohen, M. L., Haller, E. E., Hansen, W. L., Liu, A. Y., Phys. Rev. B 49, 2034 (1994).Google Scholar
4. Marton, D., Boyd, K. J., Al-Bayati, A. H., Todorov, S. S., Rabalais, J. W., Phys. Rev. Let. 73, 118 (1994).Google Scholar
5. Kaltofen, R., Sebald, T., Weise, G., Thin Solid Films 290/291, 112 (1996).Google Scholar
6. Zhang, B., Wei, B., Sullivan, D.J., Gotts, H.E., IEEE Trans. Magn. 33, 3109 (1997).Google Scholar
7. Marton, D., Boyd, K.J., Al-Bayati, A.H., Todorov, S.S., Rabalais, J.W., Phys. Rev. Lett. 73, 118 (1994).Google Scholar
8. Khurshudov, A., Kato, K., Sawada, D., Tribol. Lett. 2, 13 (1996).Google Scholar
9. Broitman, E., Macdonald, W., Hellgren, N., Radnoczi, G., ZCzigany, s., Wennerberg, A., Jacobsson, M., Hultman, L., Diamond Relat. Mater. 9, 1984–1991 (2000).Google Scholar
10. Patsalas, P. and Logothetidis, S., J. Appl. Phys. 88, 6346 (2000).Google Scholar
11. Logothetidis, S. and Stergioudis, G., Appl. Phys. Lett. 71, 2463 (1997).Google Scholar
12. Logothetidis, S., Charitidis, C., Thin Solid Films 353, 208–213 (1999).Google Scholar
13. Charitidis, C., Logothetidis, S., Gioti, M., Surf. Coat. Technol. 125, 201–206 (2000).Google Scholar
14. Jelinek, M., Kulisch, W., Delplancke-Ogletre, M.P., Vorlicek, V., Studnicka, V., Chvostova, D., Trchova, M., Sobota, J., Diam. Relat. Mater. 8, 1857 (1999).Google Scholar
15. Werninghaus, T., Zahn, D. R.T., Wang, E.G., Chen, Y., Diam. Relat. Mater. 7, 52 (1998).Google Scholar
16. Patsalas, P., Charitidis, C., Logothetidis, S., Surf. Coat. Technol. 125, 335 (2000).Google Scholar
17. Azaroff, L., ‘The powder method”, John Wiley and Sons, New York (1962).Google Scholar
18. Gioti, M., Logothetidis, S., Charitidis, C., Lefakis, H., Vacuum 53, 53–56 (1999).Google Scholar
19. Laskarakis, A., Logothetidis, S. and Gioti, M., Phys. Rev. Lett. (accepted for publication).Google Scholar
20. Martin-Gil, Jesus, Martin-Gil, F. J., Sarikaya, M., Qian, M., Jose-Yacaman, M., Rubio, A., J. Appl. Phys. 81, 2555 (1997).Google Scholar
21. Logothetidis, S., Patsalas, P., Charitidis, C., (unpublished).Google Scholar