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Multi-Hundred Gigahertz Photodetector Development Using LT GaAs

Published online by Cambridge University Press:  15 February 2011

Y. Chen ,
S. Williamson ,
T. Brock ,
F. W. Smith  and
A. R. Calawa
Y. Chen
Affiliation:
Ultrafast Science Laboratory, University of Michigan, Ann Arbor, MI 48109-2099 (Current address: AT&T Bell Laboratories, Holmdel, NJ 07733)
S. Williamson
Affiliation:
Ultrafast Science Laboratory, University of Michigan, Ann Arbor, MI
T. Brock
Affiliation:
Ultrafast Science Laboratory, University of Michigan, Ann Arbor, MI
F. W. Smith
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108
A. R. Calawa
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108
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Abstract

We report on the development of a new, integrable photoconductive-type detector based on low-temperature-grown GaAs. The detector has a response time of 1.2 ps and a 3-dB bandwidth of 375 GHz. The responsivity is 0.1 A/W. This is the fastest photodetector reported to date. We discuss the unique properties of this device, including its performance as functions of both light intensity and bias voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 227
Copyright
Copyright © Materials Research Society 1992

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References

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