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Multichamber Rie Processing for Ingaasp Ridge Waveguide Laser Arrays

Published online by Cambridge University Press:  26 February 2011

Mark A. Rothman ,
John A. Thompson  and
Craig A. Armiento
Mark A. Rothman
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
John A. Thompson
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
Craig A. Armiento
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
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Abstract

The fabrication of devices based on III-V materials often requires a number of different reactive ion etching (RIE) processes that must be implemented sequentially. These processes are typically carried out in different RIE systems to avoid cross contamination. In this paper, we describe a multichamber RIE system configured to provide several sequential etch processes required for the fabrication of optoelectronic devices. This system has been used to fabricate InGaAsP/lnP ridge waveguide laser arrays with etched mechanical features that enable passive alignment of the lasers with single-mode fibers. Laser arrays with threshold currents as low as 20 mA have been processed with a high degree of uniformity. This system has also been used to develop a laser facet etch process based on CH4/H2/Ar chemistry. This process has been used to fabricate lasers with monolithically integrated rear facet monitors. These etched facet lasers have threshold currents comparable to lasers with both facets cleaved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 341
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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