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Molecular Beam Epitaxy of ZnS Films on Arsenic Passivated Silicon Surfaces

Published online by Cambridge University Press:  21 February 2011

Xiaochuan Zhou  and
Wiley P. Kirk
Xiaochuan Zhou
Affiliation:
NanoFAB Center, Engineering-Physics Building, Texas A&M University, College Station, TX 77843-4242
Wiley P. Kirk
Affiliation:
NanoFAB Center, Engineering-Physics Building, Texas A&M University, College Station, TX 77843-4242
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Abstract

The crystalline quality of ZnS films grown on arsenic covered Si(100) surfaces is shown to be improved as compared to films grown on bare silicon surfaces by MBE (molecular beam epitaxy). Employing RGA (residual gas analyzer) and RHEED (reflection high energy electron diffraction) techniques, we found that a strong initial adsorption of sulfur on bare silicon surfaces led to the formation of disordered silicon-sulfide surfaces. This disordered surface initiated three-dimensional growth of ZnS and resulted in poor crystalline quality. An arsenic overlayer was found to be effective in preventing the interaction of sulfur with the silicon surface and thereby maintained surface ordering. X-ray rocking curve analysis indicated higher crystallinity in ZnS films grown on arsenic covered surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 207
Copyright
Copyright © Materials Research Society 1994

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References

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