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Modulated Photocurrent Measurements On Icosahedral Quasicrystals Of AI-Pd-Re System

Published online by Cambridge University Press:  10 February 2011

Yoshiko Sakairi
Affiliation:
Depertment of Materials Science, The University of Tokyo, 113–8656, Japan
Masatoshi Takeda
Affiliation:
Depertment of Mechanical Enginerring, Nagaoka University of Technology, Niigata 940–2188 JAPAN
Ryuji Tamura
Affiliation:
Depertment of Materials Science and Technology, Science University of Tokyo, Chiba 278–8510, Japan
Keiichi Edagawa
Affiliation:
Institute for Industrial Science, The University of Tokyo, Tokyo 106–8558, Japan
Kaoru Kimura
Affiliation:
Depertment of Materials Science, The University of Tokyo, 113–8656, Japan
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Abstract

Modulated photocurrent method originally developed for analyzing the electronic states of semiconductor has been applied to an Al-Pd-Re quasicrystal having high electrical resistivity. The measured DC component of the photocurrent has indicated that the mobility of the photocarrier is approximately the same as that of the dark carrier at the Fermi level. The data of the amplitude and phase shift of the AC component can be explained well by a simple model in which only the two processes, carrier generation and recombination, are involved. The recombination time obtained by fitting is by about six orders larger than those reported for semiconductors. The long recombination time as well as the energy independent mobility of carriers are discussed in view of a spiky structure in electron density of states expected for the quasicrystals.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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