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Modelling Diffusion in and From Polysilicon Layers

Published online by Cambridge University Press:  21 February 2011

C. Hill  and
S.K. Jones
C. Hill
Affiliation:
Plessey Research Caswell, Towcester, Northamptonshire, England, NN12 8EQ.
S.K. Jones
Affiliation:
Plessey Research Caswell, Towcester, Northamptonshire, England, NN12 8EQ.
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Abstract

The physical processes involved in dopant redistribution during heat treatments of polysilicon layers are described, and one and two—dimensional models based on these are presented. The quantitative effects of the physical parameters determining arsenic andboron distributions in bipolar VLSI emitter—base structures are demonstrated, andclose correspondence shown with available experimental data. Areas needing new models are outlined, and an approach to the modelling of epitaxial alignment is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 129
Copyright
Copyright © Materials Research Society 1990

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References

1. Gilmer, G.H. andFarrell, H.H. Appl. Phys. 47 4373 (1976).10.1063/1.322441Google Scholar
2. Ho, C.P. Plummer, J.D. Hansen, S.E. Dutto, R.W. -i-IEEE TED ED- 30 1438 (1983).10.1109/T-ED.1983.21322Google Scholar
3. O'Neill, A.G., Hill, C., King, J., Please, C. J.Appl.Phys. 64 (1) 167 (1988).10.1063/1.341450Google Scholar
4. Hill, C. in Semiconductor Silicon 1981 edited by Huff, H.R., Kriegler, J., Takeishi, Y. 988 Electrochem Soc. Princeton (1981).Google Scholar
5. Fair, R.B. in Impurity Doping Processes in Silicon edited by Wang, F.F.Y. 315 North Holland New York (1981).Google Scholar
6. Jones, S.K., Hill, C. in Properties of Silicon 947 INSPEC London (1988).Google Scholar
7. Tsai, M.Y., Morehead, F.F., Baglin, J.E.E., Michel, A.E., J.Appl.Phys. 51 (6) (1980)Google Scholar
8. Thompson, C.V. (and ff) in Polysilicon Films and Interfaces edited by Wong, C.Y., Thompson, C.V., Tu, K.N. 115 Mat.Res.Soc. Pittsburgh (1988).Google Scholar
9. Chou, T.C., Wong, C.Y., Tu, K.N., J.Appl.Phys. 62 2722 (1987).10.1063/1.339423Google Scholar
10. Jones, S.K. andHill, C. in Simulation of Semiconductor Devices and Processes ed.Baccarani, G. and Rudan, M. Vol 3 p441 Tecnoprint (1988).Google Scholar
11. Jones, S.K. andHill, C. (unpublished)Google Scholar
12. Gerodolle, A. andJones, S.K. (unpublished)Google Scholar
13. Gerodolle, A., Corbex, C., Poncet, A., Pedron, T. andMartin, S. in Software Tools for Process Device and Circuit Modelling ed.Crans, W. p56 Boole Press (1989).Google Scholar
14. Mei, L. andDutton, R.W., IEEE Trans Elec Dev ED-29 p 1726 (1982).10.1109/T-ED.1982.21017Google Scholar
15. Sakamoto, K., Nishi, K., Yamaji, T., Miyoshi, T. andUshio, S. J.Electrochem. Soc. 132 p2457 (1985).Google Scholar
16. Mandurah, M.M., Saraswat, K.C., Dutton, R.W. andKamins, T.I. J.Appl.Phys. 51 p5755 (1981)10.1063/1.327582Google Scholar
17. Carabelas, A., Nobili, D., Solmi, S., Journal de Physique 43(C-1) p187 (1982).Google Scholar
18. Wilson, M.C., Gold, D., Hunt, P.C. and Booker, G.R. Proc. Bipolar Circuits and Tech. Meeting, IEEE, p128 (1988).Google Scholar
19. Wilson, M.C., Jorgenson, N., Booker, G.R., Hunt, P.C. Symp. on VLSI Tech., Kobe, Japan, IEEE Cat.No. 85 CH 2125-3 p46 (1985).Google Scholar
20. Hoyt, J.L. Crabbe, E.F. Pease, R.F.W. Gibbons, J.F. Ref.8 p.285.Google Scholar
21. Gold, D. PhD Thesis Oxford (1989)Google Scholar
22. Grovenor, C. Private Communication (1989)Google Scholar
23. Ogawa, S. Okuda, S. Kouzaki, T. Yoshida, T. Yoshioka, Y. Ref. 8 p.273.Google Scholar