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Modeling the Capacitance-Voltage Characteristics of Organic Schottky Diode in the Forward Bias

Published online by Cambridge University Press:  26 February 2011

Ko-Yu Chiang
Affiliation:
hytseng_tw@yahoo.com.tw, Industrial Technology Research Institute (ITRI), Electronics and Optoelectronics Research Laboratories (EOL), Bldg. 51, No. 195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, N/A, Taiwan, +886-3-591-7669, +886-3-582-0093
Huai-Yuan Tseng
Affiliation:
HYTseng@itri.org.tw, Industrial Technology Research Institute (ITRI), Electronics and Optoelectronics Research Laboratories (EOL), Bldg. 51, No. 195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, N/A, Taiwan
Chang-Yu Lin
Affiliation:
CYL@itri.org.tw, Industrial Technology Research Institute (ITRI), Electronics and Optoelectronics Research Laboratories (EOL), Bldg. 51, No. 195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, N/A, Taiwan
Chen-Pang Kung
Affiliation:
KUNG@itri.org.tw, Industrial Technology Research Institute (ITRI), Electronics and Optoelectronics Research Laboratories (EOL), Bldg. 51, No. 195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, N/A, Taiwan
Wei-Hsin Hou
Affiliation:
jack_hou@itri.org.tw, Industrial Technology Research Institute (ITRI), Electronics and Optoelectronics Research Laboratories (EOL), Bldg. 51, No. 195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, N/A, Taiwan
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Abstract

In this work, an accurate capacitance-voltage (C-V) model of organic Schottky diode is proposed. By taking the interface trap of the Schottky barrier into account, the capacitance model was derived from the junction and interface capacitance as a function of operation voltage. The model successfully describes the turn-around capacitance characteristic of Al/poly(3-hexylphiophene)(P3HT)/poly(3,4-ethylenedioxythiophene)poly(styrene sulfonate)(PEDOT:PSS)/IZO Schottky diode in the forward bias region. The simulated capacitances are in good agreement with our experimental data.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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Modeling the Capacitance-Voltage Characteristics of Organic Schottky Diode in the Forward Bias
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