Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-26T15:22:15.477Z Has data issue: false hasContentIssue false
  • English
  • Français

Modeling and Experiments of Boron Diffusion During Sub-Millisecond Non-Melt Laser Annealing in Silicon

Published online by Cambridge University Press:  01 February 2011

Taiji Noda ,
Susan Felch ,
Vijay Parihar ,
Christa Vrancken ,
Tom Janssens ,
Hugo Bender  and
Wilfried Vandervorst
Taiji Noda
Affiliation:
noda.taiji@jp.panasonic.com, Matsushita Electric Industrial Co., Ltd., Matsushita assignee at IMEC, SPDT, Kapledreef 75, Leuven, B 3001, Belgium, +32-16-28-1545, +32-16-28-1706
Susan Felch
Affiliation:
Susan_Felch@amat.com, Appiled Materials, Sunnyvale, CA, 94086, United States
Vijay Parihar
Affiliation:
Vijay_Parihar@amat.com, Appiled Materials, Sunnyvale, CA, 94086, United States
Christa Vrancken
Affiliation:
Christa.Vrancken@imec.be, IMEC, Kapledreef 75, Leuven, N/A, B-3001, Belgium
Tom Janssens
Affiliation:
Tom.Janssens@imec.be, IMEC, Kapledreef 75, Leuven, N/A, B-3001, Belgium
Hugo Bender
Affiliation:
Hugo.Bender@imec.be, IMEC, Kapledreef 75, Leuven, N/A, B-3001, Belgium
Wilfried Vandervorst
Affiliation:
Wilfried.Vandervorst@imec.be, IMEC, Kapledreef 75, Leuven, N/A, B-3001, Belgium
Get access

Abstract

Boron diffusion and defect evolution during sub-millisecond (ms) laser annealing with partial SPER are investigated using secondary ion mass spectrometry and transmission electron microscopy. Boron diffusivity enhancement in amorphous-Si is observed during partial SPER at 550 °C. It is shown that boron diffusion during the laser annealing process is a 2-step diffusion (SPER + Laser). The depth of the amorphous layer affects the dopant activation behavior. During sub-ms laser annealing, end-of-range defects are formed and show an evolution behavior. {311} defects cannot completely transfer to dislocation loops after 1300 °C laser annealing. It is considered that the thermal budget of sub-ms laser is too small for full defect evolution. Atomistic diffusion modeling using a kinetic Monte Carlo method can explain the defect behavior during laser annealing.

Keywords

diffusionsecondary ion mass spectroscopy (SIMS)simulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C05-06
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Ito, T., et al., Symp. VLSI Tech. Dig., p. 53 (2003).Google Scholar
2 Shima, A., et al., Symp. VLSI Tech. Dig., p. 174 (2004).Google Scholar
3 Fung, S. K. H., et al., Symp. VLSI Tech. Dig., p. 92 (2004).Google Scholar
4 Adachi, K., et al., Symp. VLSI Tech. Dig., p. 142 (2005).Google Scholar
5 Jacques, J., et al., Appl. Phys. Lett. 82, 3469 (2003).Google Scholar
6 Jaraiz, M., et al., Mat.Res.Soc.Symp.Proc. 532,43 (1998).Google Scholar
7 Noda, T., J. Appl. Phys. 94, 6396 (2003).Google Scholar