Modeling and Experiments of Boron Diffusion During Sub-Millisecond Non-Melt Laser Annealing in Silicon

Taiji Noda; Susan Felch; Vijay Parihar; Christa Vrancken; Tom Janssens; Hugo Bender; Wilfried Vandervorst

doi:10.1557/PROC-0912-C05-06

Published online by Cambridge University Press: 01 February 2011

Taiji Noda ,

Susan Felch ,

Hugo Bender and

Taiji Noda

Affiliation:

noda.taiji@jp.panasonic.com, Matsushita Electric Industrial Co., Ltd., Matsushita assignee at IMEC, SPDT, Kapledreef 75, Leuven, B 3001, Belgium, +32-16-28-1545, +32-16-28-1706

Susan Felch

Affiliation:

Susan_Felch@amat.com, Appiled Materials, Sunnyvale, CA, 94086, United States

Vijay Parihar

Affiliation:

Vijay_Parihar@amat.com, Appiled Materials, Sunnyvale, CA, 94086, United States

Christa Vrancken

Affiliation:

Christa.Vrancken@imec.be, IMEC, Kapledreef 75, Leuven, N/A, B-3001, Belgium

Tom Janssens

Affiliation:

Tom.Janssens@imec.be, IMEC, Kapledreef 75, Leuven, N/A, B-3001, Belgium

Hugo Bender

Affiliation:

Hugo.Bender@imec.be, IMEC, Kapledreef 75, Leuven, N/A, B-3001, Belgium

Wilfried Vandervorst

Affiliation:

Wilfried.Vandervorst@imec.be, IMEC, Kapledreef 75, Leuven, N/A, B-3001, Belgium

Corresponding

E-mail address:

noda.taiji@jp.panasonic.com ;

Susan_Felch@amat.com ;

Vijay_Parihar@amat.com ;

Christa.Vrancken@imec.be ;

Tom.Janssens@imec.be ;

Hugo.Bender@imec.be ;

Wilfried.Vandervorst@imec.be

Abstract

Boron diffusion and defect evolution during sub-millisecond (ms) laser annealing with partial SPER are investigated using secondary ion mass spectrometry and transmission electron microscopy. Boron diffusivity enhancement in amorphous-Si is observed during partial SPER at 550 °C. It is shown that boron diffusion during the laser annealing process is a 2-step diffusion (SPER + Laser). The depth of the amorphous layer affects the dopant activation behavior. During sub-ms laser annealing, end-of-range defects are formed and show an evolution behavior. {311} defects cannot completely transfer to dislocation loops after 1300 °C laser annealing. It is considered that the thermal budget of sub-ms laser is too small for full defect evolution. Atomistic diffusion modeling using a kinetic Monte Carlo method can explain the defect behavior during laser annealing.

References

1 Ito, T., et al., Symp. VLSI Tech. Dig., p. 53 (2003).Google Scholar

2 Shima, A., et al., Symp. VLSI Tech. Dig., p. 174 (2004).Google Scholar

3 Fung, S. K. H., et al., Symp. VLSI Tech. Dig., p. 92 (2004).Google Scholar

4 Adachi, K., et al., Symp. VLSI Tech. Dig., p. 142 (2005).Google Scholar

5 Jacques, J., et al., Appl. Phys. Lett. 82, 3469 (2003).CrossRef Google Scholar

6 Jaraiz, M., et al., Mat.Res.Soc.Symp.Proc. 532,43 (1998).CrossRef Google Scholar

7 Noda, T., J. Appl. Phys. 94, 6396 (2003).CrossRef Google Scholar

Crossref Citations

This article has been cited by the following publications. This list is generated based on data provided by CrossRef.

Colombeau, B. Mok, K.R.C. Yeong, S.H. Benistant, F. Indajang, B. Tan, O. Yang, B. Li, Y. Jaraiz, M. Cowern, N.E.B. and Chu, S. 2006. Design and Optimization of nanoCMOS devices using predictive atomistic physics-based process modeling. p. 1.

Noda, T. Vandervorst, W. Felch, S. Parihar, V. Vrancken, C. Severi, S. Falepin, A. Janssens, T. Bender, H. Van Daele, B. Eyben, P. Niwa, M. Schreutelkamp, R. Nouri, F. Absil, P. P. Jurczak, M. De Meyer, K. and Biesemans, S. 2006. Analysis of Dopant Diffusion and Defect Evolution during sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach. p. 1.

Noda, T. Vandervorst, W. Felch, S. Parihar, V. Cuperus, A. Mcintosh, R. Vrancken, C. Rosseel, E. Bender, H. Van Daele, B. Niwa, M. Umimoto, H. Schreutelkamp, R. Absil, P. P. Jurczak, M. De Meyer, K. Biesemans, S. and Hoffmann, T. Y. 2007. Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach. p. 955.

Timans, Paul J Hu, Yao Zhi Gelpey, Jeff McCoy, Steve Lerch, Wilfried Paul, Silke Bolze, Detlef and Kheyrandish, Hamid 2008. Efficacy of Damage Annealing in Advanced Ultra-Shallow Junction Processing. MRS Proceedings, Vol. 1070, Issue. ,

Timans, P. J. Hu, Y. Z. Lee, Y. Gelpey, J. McCoy, S. Lerch, W. Paul, S. Bolze, D. Kheyrandish, H. Reyes, J. and Prussin, S. 2008. Optimization of diffusion, activation and damage annealing in millisecond annealing. p. 65.

Colin, A. Morin, P. Beneyton, R. Pinzelli, Luc Mathiot, D. and Fogarassy, E. 2010. Dopant diffusion and activation induced by sub-melt laser anneal within the co-implanted p+ polycrystalline silicon gate used in CMOS technologies. Thin Solid Films, Vol. 518, Issue. 9, p. 2390.

Timans, P. J. Xing, G. Cibere, J. Hamm, S. and McCoy, S. 2014. Subsecond Annealing of Advanced Materials. Vol. 192, Issue. , p. 229.

Martin-Bragado, Ignacio Borges, Ricardo Balbuena, Juan Pablo and Jaraiz, Martin 2018. Kinetic Monte Carlo simulation for semiconductor processing: A review. Progress in Materials Science, Vol. 92, Issue. , p. 1.

Article contents

Modeling and Experiments of Boron Diffusion During Sub-Millisecond Non-Melt Laser Annealing in Silicon

Abstract

Keywords

Access options

References

Full text views

This article has been cited by the following publications. This list is generated based on data provided by CrossRef.

Article contents

Modeling and Experiments of Boron Diffusion During Sub-Millisecond Non-Melt Laser Annealing in Silicon

Abstract

Keywords

Access options

References

Full text views

Send article to Kindle

Send article to Dropbox

Send article to Google Drive

Reply to: Submit a response

Your details

Conflicting interests