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Miniaturization of Electromagnetic Bandgap Structures with Thin Film Dielectrics for Si Interposer Applications

Published online by Cambridge University Press:  15 March 2011

Koichi Takemura
Affiliation:
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
Noriaki Ando
Affiliation:
System Jisso Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
Hiroshi Toyao
Affiliation:
System Jisso Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
Takashi Manako
Affiliation:
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
Tsuneo Tsukagoshi
Affiliation:
System Jisso Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Abstract

We have developed miniaturized electromagnetic bandgap (EBG) structures on Si having a stopband that covers the 2.4 GHz band. By combining thin film dielectrics with inductance-enhanced EBG structures, the unit cell size can be reduced to 1 mm × 1 mm or less. Like the EBG structures embedded in conventional printed circuit boards, the stopbands can be designed using the transmission-line theory. The developed EBG structures can be integrated into Si interposers to suppress power noise.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

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