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Microwave Tuning Quality and Power Handling of Voltage-Tunable Capacitors: Semiconductor Varactors Versus Ba1−xSrxTiO3 Films

Published online by Cambridge University Press:  10 February 2011

D. Gait ,
T. Rivkina  and
M. W. Cromar
D. Gait
Affiliation:
SCT, Inc., 720 Corporate Circle, Golden, CO 80401, galt@reachsct.com
T. Rivkina
Affiliation:
SCT, Inc., 720 Corporate Circle, Golden, CO 80401, galt@reachsct.com
M. W. Cromar
Affiliation:
SCT, Inc., 720 Corporate Circle, Golden, CO 80401, galt@reachsct.com
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Abstract

Thin films of SrTiO3 and Ba0.4Sr0.6TiO3 have been pulse laser ablated onto LaAIO3 substrates. Normal metal coplanar capacitor electrodes were patterned on top of these films and the capacitors were incorporated into weakly coupled microstrip resonators. Resonant frequencies and Q's were measured as a function of bias at room temperature and at 77 K. The microwave frequency capacitance and loss is calculated from the resonant properties and compared with the simultaneously measured 1 MHz capacitance and dissipation. Two-tone intermodulation distortion products were measured and the third-order intercept is referenced to the microwave voltage across the capacitors. Commercially available semiconductor varactors were tested in a similar manner. The tuning quality (the ratio of the relative capacitance tuning to dissipation), frequency dispersion, and power handling of these capacitors are compared. Although there appears to be no intrinsic power handling advantage of the paraelectrics over the semiconductor varactors, the paraelectric varactors can offer better tuning quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 341
Copyright
Copyright © Materials Research Society 1998

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References

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