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Microstructure of GaN Films Grown by RF-Plasma Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  17 March 2011

Philomela Komninou
Affiliation:
Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Thomas Kehagias
Affiliation:
Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Joseph Kioseoglou
Affiliation:
Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Eirini Sarigiannidou
Affiliation:
Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Theodoros Karakostas
Affiliation:
Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Gerard Nouet
Affiliation:
ESCTM-CRISMAT, UMR6508-CNRS, ISMRA Caen Cedex, 6 boul. du Marechal Juin, 14050, France
Pierre Ruterana
Affiliation:
ESCTM-CRISMAT, UMR6508-CNRS, ISMRA Caen Cedex, 6 boul. du Marechal Juin, 14050, France
Khalid Amimer
Affiliation:
FORTH/IESL and Physics Department, University of Crete, Heraklion-Crete, P.O.Box 1527, 71110, Greece
Spyros Mikroulis
Affiliation:
FORTH/IESL and Physics Department, University of Crete, Heraklion-Crete, P.O.Box 1527, 71110, Greece
Alexandros Georgakilas
Affiliation:
FORTH/IESL and Physics Department, University of Crete, Heraklion-Crete, P.O.Box 1527, 71110, Greece
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Abstract

The influence of the variation of the Ga/N flux ratio during deposition and of the different substrate nitridation temperatures on the microstructure of 2H-GaN films grown on (0001) sapphire, by RF plasma MBE, is investigated by conventional and high resolution Transmission Electron Microscopy (TEM-HREM). The different growth rates of the inverse polarity domains in Ga-rich and N-rich specimens result in film surfaces of different roughness, whereas the stacking fault (SF) content is significantly higher in samples grown under N-rich conditions. Low temperature nitridation of the substrate results in a low density of defects in GaN film. Cubic GaN “pockets”, near the substrate/GaN interface that are present in low temperature nitridated samples are not observed in high temperature nitridated samples.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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