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Microstructure and Densification of Sintered (B+C)-Doped β-Silicon Carbide

Published online by Cambridge University Press:  22 February 2011

Wolfgang Braue
Affiliation:
German Aerospace Research Establishment (DLR), Material Research Institute, Cologne, Germany
Hans-J. Kleebe
Affiliation:
University of Bayreuth, Materials Research Institute (IMA), Bayreuth, Germany
Carsten Wehling
Affiliation:
Technical University Berlin, Institute for Nonmetallic Materials, Berlin, Germany
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Abstract

The role of boron and carbon during densification of sintered β-SiC was investigated through the combined approach of in-situ dilatometry and CTEM/AEM inspection of TEM-foils referring to well-defined densification events. Preliminary data obtained indicate that in the early stages of densification, boron is not enriched in the continuous carbon-rich surface layer covering the β-SiC powder particles nor does it segregate to internal interfaces in high quantities. Small boron quantities are dissolved in the SiC grains- Simultaneously with the β- to α- phase transformation, decomposition of foam-like B4C aggregates releases small B4C particles, which are bound intragranularly to α-SiC.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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