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Microscopic Structure of Er-Related Optically Active Centers in Si

Published online by Cambridge University Press:  10 February 2011

H. Przybylinska
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, PL-02 668 Warsaw, Poland
N. Q. Vinh
Affiliation:
Van der Waals–Zeeman Institute, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam, The Netherlands
B.A. Andreev
Affiliation:
Institute for Physics of Microstructures, GSP-105, 603600 Nizhny Novgorod, Russia
Z. F. Krasil'nik
Affiliation:
Institute for Physics of Microstructures, GSP-105, 603600 Nizhny Novgorod, Russia
T. Gregorkiewicz
Affiliation:
Van der Waals–Zeeman Institute, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam, The Netherlands
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Abstract

A successful observation and analysis of the Zeeman effect on the near 1.54 μm photoluminescence spectrum in Er-doped crystalline MBE-grown silicon are reported. A clearly resolved splitting of 5 major spectral components was observed in magnetic fields up to 5.5 T. Based on the analysis of the data the symmetry of the dominant optically active center was conclusively established as orthorhombic I (C2v), with g‼≈18.4 and g⊥≈0 in the ground state. The fact that g⊥≈0 explains why EPR detection of Er-related optically active centers in silicon may be difficult. Preferential generation of a single type of an optically active Er-related center in MBE growth confirmed in this study is essential for photonic applications of Si:Er.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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