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Micro-Reflection Spectroscopy Profiling of Interdiffusion in Epitaxial HgCdTe

Published online by Cambridge University Press:  25 February 2011

M. Grimbergen  and
A. Szilagy
M. Grimbergen
Affiliation:
Honeywell Electro-Optics Division, 2 Forbes Road, Lexington, MA 02173
A. Szilagy
Affiliation:
Honeywell Electro-Optics Division, 2 Forbes Road, Lexington, MA 02173
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Abstract

Composition profiles of interdiffused epitaxial Hg1-xCdxTe have been determined using interband E1 microreflection spectroscopy. The technique provides a rapid, noncontacting method of compositional analysis using the near UV-visible spectral range. It measures alloy composition (x-value) over a sampling surface as small as 5 μm square to an accuracy better than 0.01. Profiles are measured by repeatedly etching small sampling wells in discrete steps. Profiles were measured on epitaxial Hg0.7Cd0.3Te films grown on Hg0.8Cd0.2Te substrates with and without extended anneal treatments. They were also calculated by numerically solving the diffusion equation using published composition dependent diffusion coefficients. The experimental and theoretical profiles are compared graphically. Calculated as-grown and annealed interdiffusion widths (9 and 13μm, respectively) differ from measured values by less than 15%. It is shown that Hg and Cd interdiffusion during both the growth and subsequent anneal is responsible for the observed interface widths.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 257
Copyright
Copyright © Materials Research Society 1986

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References

1. Galazka, R.R. and Kisiel, A., Phys. Stat. Sol. 34, 63 (1969)CrossRefGoogle Scholar
2. Pollak, F., Okeke, C.E., Vanier, P.E., and Raccah, P.M., J. Appl. Phys. 49, 4216 (1978)CrossRefGoogle Scholar
3. Migliorato, P. and White, A.M., Solid-State Electron, 26, 65 (1983)CrossRefGoogle Scholar
4. Zanio, K., Massopust, T., Abstract in Elec. Mat. Conf., 1985 Google Scholar
5. Reine, M. B., private communication, based on analysis ofF. Bailly, Cohen-Solal, G. and Marfaing, Y., Compt. Rend. Acad. Sci., 257, 103 (1963)Google Scholar
6. Dornhaus, R. and Nimtz, G., Springer Tracts in Modem Physics, 78, 17 (1976)Google Scholar
7. Moritani, A., Taniguchi, K., Hamaguchi, C. and Nakai, J., J. Phys. Soc. Jap., 34, 79 (1973)CrossRefGoogle Scholar
8. Vina, L., Umbach, C., Cardona, M. and Vodopyanov, L., Phys. Rev. B, 29, 6752 (1984)CrossRefGoogle Scholar
9. Arwin, H. and Aspnes, D.E., J. Vac. Sci. Technol., A2, 1316 (1984)CrossRefGoogle Scholar
10. Pollard, J.H., Proc. IRIS Detector, 1, 147 (1984)Google Scholar
11. VanVechten, J., Bergstresser, T., Phys. Rev., B1, 3351 (1970)CrossRefGoogle Scholar
12. Raccah, P. and Lee, U., J. Vac. Sci. Tech., A1, 1587 (1983)CrossRefGoogle Scholar
13. Svob, L., Marfaing, Y., Triboulet, R., Bailly, F. and Cohen-Solal, G., J. Appl. Phys., 46,4251 (1975)CrossRefGoogle Scholar
14. Takigawa, H., Yoshikawa, M., Ito, M., and Maruyama, K., Mat. Res. Soc. Symp. Proc., 37, 101 (1985)Google Scholar