Hostname: page-component-848d4c4894-m9kch Total loading time: 0 Render date: 2024-04-30T17:59:51.785Z Has data issue: false hasContentIssue false
  • English
  • Français

Microporous Ruthenium Oxide Films for Energy Storage Applications

Published online by Cambridge University Press:  18 March 2011

J.P. Zheng  and
Q.L. Fang
J.P. Zheng
Affiliation:
Department of Electrical and Computer EngineeringFlorida A&M University and Florida State UniversityTallahassee, FL 32310, USA
Q.L. Fang
Affiliation:
Department of Electrical and Computer EngineeringFlorida A&M University and Florida State UniversityTallahassee, FL 32310, USA
Get access

Abstract

Highly porous ruthenium oxide films were prepared using ruthenium ethoxide solution at low temperatures. The specific capacitance of the ruthenium oxide film electrode made with ruthenium ethoxide solution is much higher than that made using the traditional ruthenium chloride solution. It was found that amorphous ruthenium oxide films with high porosity could be formed at temperatures of 100-200 °C. At temperatures above 250 °C, crystalline ruthenium oxide films were formed. Electrochemical capacitors were made with ruthenium oxide film electrodes and were tested under constant current charging and discharging. The maximum specific capacitance of 593 F/g was obtained from the electrode prepared at 200 °C. The interfacial capacitance increased linearly with increasing film thickness. A value of interfacial capacitance as high as 4 F/cm2 was obtained from the electrode prepared at 200 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 658: Symposium GG – Solid-State Chemistry of Inorganic Materials III , 2000 , GG97.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Zheng, J. P. and Jow, T. R., J. Power Sources 62, 155 (1996).Google Scholar
2. Zheng, J. P., Electrochem. and Solid-State Lett. 2, 359 (1999).Google Scholar
3. Zheng, J. P. and Jow, T. R., J. Electrochem. Soc. 142, L6, (1995).Google Scholar
4. Zheng, J. P., Cygan, P. J., and Jow, T. R., J. Electrochem. Soc. 142, 2699 (1995).Google Scholar
5. Zheng, J. P., Evans, D. A., and Roberson, S. L., to be published.Google Scholar
6. Raistrick, I. D., in The Electrochemistry of Semiconductors and Electrodes – Processes and Devices, McHardy, J. and Ludwig, F., Editors, p. 297, Noyes, Park Ridge, NJ (1992).Google Scholar
7. Zheng, J. P., Jow, T. R., Jia, Q. X., and Wu, X. D., J. Electrochem. Soc. 143, 1068 (1996).Google Scholar
8. Brinker, C. J. and Scherer, G. W., “Sol-Gel Science, The Physics and Chemistry of Sol-Gel Processing”, Academic Press, Boston, (1990).Google Scholar
9. Mayer, S. T., Pekala, R. W., and Kaschmitter, J. L., J. Electrochem. Soc. 140, 446 (1993).Google Scholar