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Microbridge Testing of Silicon Oxide/Silicon Nitride Bilayer Films

Published online by Cambridge University Press:  17 March 2011

C.-F. Qian
Affiliation:
Visiting scholar from Beijing University of Chemical Technology, Beijing, China
Y.-J. Su
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
M.-H. Zhao
Affiliation:
Visiting scholar from Zhengzhou Research Institute of Mechanical Engineering, Zhengzhou, China
T.-Y. Zhang*
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
*
Corresponding author, Tel. (852) 2358-7192, Fax (852) 2358-1543, E-mail: mezhangt@ust.hk ( T.-Y. Zhang )
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Abstract

The present work further develops the microbridge testing method to characterize mechanical properties of bilayer thin films. A closed-form formula for deflection versus load under small deflection is derived with consideration of the substrate deformation and residual stress in each layer. The analysis shows that the solution for bending a bilayer beam is equivalent to that for bending a single-layer beam with an equivalent bending stiffness, an equivalent residual force and a residual moment. One can estimate the Young's modulus and residual stress in a layer if the corresponding values in the other layer are known. The analytic results are confirmed by finite element calculations. The microbridge tests are conducted on low-temperature-silicon oxide (LTO)/silicon nitride bilayer films as well as on silicon nitride single-layer films. All microbridge specimens are prepared by the microfabricating technique. The tests on the single-layer films provide the material properties of the silicon nitride films. Then, applying the proposed method for bilayer films under small deflection yields the Young's modulus of 37 GPa and the residual stress of -148 MPa for LTO films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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