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Metal Vapour Vacuum Arc Ion Source to Synthesize Refractory Metal Silicides

Published online by Cambridge University Press:  22 February 2011

B.X. Liu ,
D.H. Zhu ,
H.B. Lu  and
K. Tao
B.X. Liu
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA
D.H. Zhu
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA
H.B. Lu
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA
K. Tao
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA
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Abstract

Metal Vapour Vacuum Arc (MEWA) Ion Source was employed, for the first time, to synthesize metal suicides. Refractory metal suicides NbSi2, TaSi2, WSi2 and MoSi2 were successfully formed by implanting respective metal ions into Si(111) wafers. It was found that the high current density metal ion implantation not only provided the metal components but also caused a simultaneous annealing for various metal-suicide phases to grow. When the impLantation was conducted at 40 kV, the Nb ion current density was up to 76 µA/cm2 at a dose of 4x1017/cm 2, and the Ta, W and Mo ion current densities were up to 65 µA/cm2 at a dose of 5×1017 ions/cm2 , hexagonal NbSi2, TaSi2, MoSi2 and WSi2 were formed. Post annealing transformed the WSi2 and MoSi2 phases from hexagonal to tetragonal structure, featuring lower resistance than that of the as-implanted ones.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 795
Copyright
Copyright © Materials Research Society 1994

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References

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