Skip to main content Accessibility help
×
Home
Hostname: page-component-78dcdb465f-w78fb Total loading time: 0.288 Render date: 2021-04-19T16:55:33.464Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

The mean inner potential of GaN measured from nanowires using off-axis electron holography

Published online by Cambridge University Press:  01 February 2011

Andrew See Weng Wong
Affiliation:
swaw2@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, Pembroke Street, New Museum Site, Cambridge, Cambridgeshire, CB23QZ, United Kingdom, 44-(0)1223-334368
Ghim Wei Ho
Affiliation:
gwh23@cam.ac.uk, University of Cambridge, Nanoscience Center, United Kingdom
Rafal E Dunin-Borkowski
Affiliation:
red10@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, United Kingdom
Takeshi Kasama
Affiliation:
tk305@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, United Kingdom
Rachel A Oliver
Affiliation:
rao28@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, United Kingdom
Pedro MFJ Costa
Affiliation:
pmfjc2@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, United Kingdom
Colin John Humphreys
Affiliation:
colin.humphreys@msm.cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, United Kingdom
Get access

Abstract

The mean inner potentials of wurtzite GaN nanowires are measured using off-axis electron holography in the transmission electron microscope (TEM). The nanowires have a circular cross-section and are suspended across holes in a holey carbon film, resulting in an accurate knowledge of their thickness profiles and orientations. They are also free of the implantation and damage that is present in mechanically-polished ion-milled TEM specimens. The effect of a thin amorphous coating, which is present on the surfaces of the nanowires, on measurements of their mean inner potential is assessed. A value for the mean inner potential of GaN of (16.7 ± 0.3) V is obtained from these samples.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Dunin-Borkowski, R.E., McCartney, M.R., Smith, D.J., Electron holography of nanostructured materials in: Nalwa, H.S. (Ed.), Encyclopaedia of Nanoscience and Nanotechnology, Vol 3, American Scientific Publishers, Stevenson Ranch, CA, (2004).Google Scholar
2. Tonomura, A., Allard, L.F., Pozzi, G., Joy, D.C. and Ono, Y.A. (Eds.), Electron holography, Elsevier, Amsterdam, (1995).Google ScholarPubMed
3. Völkl, E., Allard, L.F. and Joy, D.C. (Eds.), Introduction to Electron Holography, Plenum, New York, (1998).Google Scholar
4. Takeguchi, M., McCartney, M.R. and Smith, D.J., Appl. Phys. Lett. 84, 2103 (2004).CrossRefGoogle Scholar
10. Stevens, M., Bell, A., McCartney, M.R., Ponce, F.A., Marui, H. and Tanaka, S., Appl. Phys. Lett. 85, 4651 (2004).CrossRefGoogle Scholar
5. Li, J., McCartney, M.R., Dunin-Borkowshi, R.E., and Smith, D.J., Acta Cryst. A 55, 652 (1999).CrossRefGoogle Scholar
6. Gajdardziska-Josifovska, M., McCartney, M.R., de Ruijter, W.J., Smith, D.J., Weiss, J.K. and Zuo, J.M., Ultramicroscopy 50, 285 (1993).CrossRefGoogle Scholar
7. McCartney, M.R., Gribelyuk, M.A., Li, J., Rosheim, P., McMurray, J.S. and Smith, D.J., Appl. Phys. Lett. 80, 3213 (2002).CrossRefGoogle Scholar
8. Dunin-Borkowski, R.E., Newcomb, S.B., Kasama, T., McCartney, M.R., Weyland, M. and Midgley, P.A., Ultamicroscopy 103, 67 (2005).CrossRefGoogle Scholar
9. Barnard, J.S., Kappers, M.J., Thrush, E.J. and Humphreys, C.J., in Microscopy of Semiconducting Materials 2003, Inst. of Physics, Bristol and Philadelphia, 281 (2003).Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 12 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 19th April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

The mean inner potential of GaN measured from nanowires using off-axis electron holography
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

The mean inner potential of GaN measured from nanowires using off-axis electron holography
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

The mean inner potential of GaN measured from nanowires using off-axis electron holography
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *