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MBE Growth and Optical Characterization of InGaN/AlGaN Multiquantum Wells

Published online by Cambridge University Press:  10 February 2011

R. Singh ,
W.D. Herzog ,
D. Doppalapudi ,
M.S. ÜnlÜ ,
B.B. Goldberg  and
T.D. Moustakas
R. Singh
Affiliation:
ECE Department and Center for Photonics Research, Boston University, Boston MA 02215
W.D. Herzog
Affiliation:
ECE Department and Center for Photonics Research, Boston University, Boston MA 02215
D. Doppalapudi
Affiliation:
Also at the department of Manufacturing Engineering, Boston University MA 02215
M.S. ÜnlÜ
Affiliation:
ECE Department and Center for Photonics Research, Boston University, Boston MA 02215
B.B. Goldberg
Affiliation:
Department of Physics, Boston University, Boston MA 02215
T.D. Moustakas
Affiliation:
ECE Department and Center for Photonics Research, Boston University, Boston MA 02215
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Abstract

We report the growth of InGaN/AIGaN MQWs on c-plane sapphire by electron cyclotron resonance assisted molecular beam epitaxy (ECR-MBE). Two types of structures were investigated; one employing a GaN and the other a A1GaN barrier layer. The first structure consists of five periods of 80 Å thick In0.09Ga0.91N wells separated by 90 Å thick GaN barriers. The second structure consists of|seven periods of 120 Å thick In0.35Ga0.65N wells and Al0.1Ga0.9N barriers. The substrate temperature was kept constant during the growth of both the wells and the barriers, thus avoiding the need for any temperature cycling during the growth, which may lead to interfacial contamination. The films were characterized by cross sectional transmission electron microscopy (TEM), room temperature photoluminescence (PL) and sub-micron resolution luminescence microscopy. TEM images show sharp and abrupt interfaces, thus confirming the high interfacial quality of the MQW structures. Both structures exhibit strong RT luminescence emission peaking at 387 nm (FWHM = 16nm) for the In0.09Ga0.91N/GaN structure and at 463 nm (FWHM = 28nm) for the In0.35Ga0.65N/A10.1Ga0 9N structure. The high resolution luminescence microscopy studies reveal that the radiative recombination for the InGaN quantum wells is 60–70 times more efficient than for the underlying GaN film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 185
Copyright
Copyright © Materials Research Society 1997

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References

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