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Materials Development for Thermomagnetic Cooling

Published online by Cambridge University Press:  10 February 2011

F. Freibert
Affiliation:
Trugman, Thermal and Condensed Matter Physics, MS K764, Los Alamos National Laboratory, Los Alamos, NM 87545, (505) 667–2515, migliori@lanl.gov
A. Migliori
Affiliation:
Trugman, Thermal and Condensed Matter Physics, MS K764, Los Alamos National Laboratory, Los Alamos, NM 87545, (505) 667–2515, migliori@lanl.gov
T. W. Darling
Affiliation:
Trugman, Thermal and Condensed Matter Physics, MS K764, Los Alamos National Laboratory, Los Alamos, NM 87545, (505) 667–2515, migliori@lanl.gov
S. A. Trugman
Affiliation:
Trugman, Thermal and Condensed Matter Physics, MS K764, Los Alamos National Laboratory, Los Alamos, NM 87545, (505) 667–2515, migliori@lanl.gov
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Abstract

We review thermoelectric effects in a magnetic field at a phenomenological level. The measurement problem is discussed in detail, and results are presented based on the time-dependent voltages developed by thermoelectric materials in zero field and in large magnetic fields. These time dependent voltages provide a direct and unambiguously accurate measurement of both the Peltier and Ettingshausen figures of merit, and can be used to obtain all the relevant transport including thermal conductivity. Discussion of the limiting performance of both Peltier and Ettingshausen coolers are discussed. Data are shown for Ettingshausen materials with part-per-million levels of Sn doping. Thought these materials exhibit high Ettingshausen figures of merit, Sn doping does not appear to improve performance.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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