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Material Properties of Sipos Films Prepared by XeCl Excimer Laser Annealing of a-Si:Nx Films

Published online by Cambridge University Press:  10 February 2011

Hong-Seok Choi ,
Jae-Hong Jun ,
Keun-Ho Jang  and
Min-Koo Han
Hong-Seok Choi
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Jae-Hong Jun
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Keun-Ho Jang
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Min-Koo Han
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
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Abstract

The material properties of laser-annealed a-Si:Nx films were investigated. The a-Si:Nx films for laser-annealing were deposited by rf plasma enhanced chemical vapor deposition (PECVD) with NH3 and SiH4 gas mixtures. At the 0.35 of NH3/SiH4 ratio, the optical band-gap was abruptly increased to 2.82 eV from 2.05 eV by laser-annealing which indicates that Si-N bonding comes to be notable at that ratio. The electrical conductivity showed the maximum value of 4× 10-6 S/cm at the 0.11 of NH3/SiH4 ratio where the grain growth and the increase of Si-N bonding are optimized for the enhancement of electrical conductivity. The σP/σD ratio which is related to the defects states for photo generation centers was decreased with increasing NH 3/SiH 4 ratio. Our experimental data showed that the optical band gap and electrical conductivity of laserannealed a-Si:Nx films were dominantly affected by the NH3/SiH4 ratio at the 250 mJ/cm2 of laser-annealing energy density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 119
Copyright
Copyright © Materials Research Society 1997

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