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Luminescence from erbium oxide grown on silicon

Published online by Cambridge University Press:  21 March 2011

E. Nogales ,
B. Méndez ,
J. Piqueras ,
R. Plugaru ,
J. A. García  and
T. J. Tate
E. Nogales
Affiliation:
Universidad Complutense de Madrid, Dpto. Física de Materiales, 28040 Madrid, Spain.
B. Méndez
Affiliation:
Universidad Complutense de Madrid, Dpto. Física de Materiales, 28040 Madrid, Spain.
J. Piqueras
Affiliation:
Universidad Complutense de Madrid, Dpto. Física de Materiales, 28040 Madrid, Spain.
R. Plugaru
Affiliation:
Inst. of Microtechnology, Bucharest, Romania.
J. A. García
Affiliation:
Universidad del Pais Vasco, Dpto. Física Aplicada II, Vizcaya, Spain.
T. J. Tate
Affiliation:
Imperial College, Dpt. of Electrical and Electronic Engineering, London, United Kingdom.
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Abstract

The luminescence properties of erbium oxide grown on crystalline and amorphous silicon substrates were studied by means of photo- and cathodoluminescence techniques. Differences in the luminescence spectra for samples grown on the two types of substrates used are explained in terms of the different types of erbium centers formed by taking into account the substrate properties and the thermal treatments during growth. For comparison, erbium implanted and oxygen coimplanted crystalline and amorphous silicon have been also investigated by luminescence techniques. In the implanted samples, the sharp transitions from erbium ions in the visible range were quenched and the main emission corresponds to the intraionic transitions in Er3+ ions in the infrared range peaked at 1,54 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.14.1
Copyright
Copyright © Materials Research Society 2002

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